RF Power Transistors for Pulsed Power Designs up to 600 W
Spectrum’s lineup of pre-matched, Silicon Bipolar devices for various legacy pulsed power systems. These transistors are suited for applications up to 1.2 GHz with output power requirements of up to 600 W. They are delivered in thermally-efficient metallized packages, and provide efficiencies up to 50%.
| Part Number | Vcc (V) | Freq (MHz) | Power Out (W) | Gain (dB) | Eff (%) | PW | DC | Package | ST | Microsemi |
|---|---|---|---|---|---|---|---|---|---|---|
| SD1090-150 | 50 | 1030-1090 | 150 | 7.5 | 40 | 10uS | 1% | 0.250 Sq Hermetic | SD1537-01 | - |
| SD1090-200 | 50 | 1025-1150 | 200 | 7.5 | 40 | 10uS | 1% | 0.400 Sq Hermetic | SD1538-08 | MS2393 |
| SD0912-300 | 50 | 950-1215 | 300 | 6.5 | 40 | 10uS | 1% | 0.400 Sq Hermetic | SD1540-08 | - |
| SD1090-400 | 50 | 1025-1150 | 400 | 6.5 | 40 | 10uS | 1% | 0.4 x 0.5 Hermetic | SD1541-01 | - |
| SD1090-550 | 50 | 1025-1150 | 550 | 6.0 | 40 | 10uS | 1% | 0.4 x 0.5 Hermetic | SD1542 | MS2472 |
| SD1090-600 | 50 | 1030-1090 | 600 | 6.0 | 40 | 10uS | 1% | 0.4 x 0.5 Hermetic | SD1542-04 | MS2473 |